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BPW41N
Vishay Semiconductors
Silicon PIN Photodiode
94 8480
DESCRIPTION BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters.
FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm
emitters • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Compliant to RoHS Directive to 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission
systems, e.g. in combination with TSALxxxx series IR emitters
PRODUCT SUMMARY
COMPONENT BPW41N
Ira (μA) 45
Note • Test condition see table “Basic Characteristics”
ϕ (deg) ± 65
λ0.5 (nm) 870 to 1050
ORDERING INFORMATION
ORDERING CODE BPW41N
Note • MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM Side view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient
Tamb ≤ 25 °C
t≤5s Connected with Cu wire, 0.14 mm2
VR PV Tj Tamb Tstg Tsd RthJA
VALUE 60 215 100
- 40 to + 100 - 40 to + 100
260 350
UNIT V
mW °C °C °C °C K/W
Rev. 1.6, 23-Aug-11
1
Document Number: 81522
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
BPW41N
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Breakdown voltage Reverse dark current
Diode capacitance
Open circuit Voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current
Angle of half sensitivity
IR = 100 μA, E = 0
V(BR)
60
VR = 10 V, E = 0
Iro
VR= 0 V, f = 1 MHz, E = 0
CD
VR= 3 V, f = 1 MHz, E = 0
CD
Ee = 1 mW/cm2, λ = 950 nm
Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
Ee = 1 mW/cm2, λ = 950 nm
Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
Ira
43
ϕ
Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time
VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm
λp λ0.5 NEP
tr tf
TYP.
2 70 25 350 - 2.6 38 0.1
45
± 65 950 870 to 1050 4 x 10-14 100 100
MAX. 30 40
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
UNIT V nA pF pF mV
mV/K μA %/K
μA
deg nm nm W/√ Hz ns ns
Ira rel - Relative Reverse Light Current
1.4
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6 0
20
40
60
80 100
94 8409
Tamb - Ambient Temperature (°C)
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
Ira - Reverse Light Current (µA)
100
λ = 950 nm
10
1 mW/cm2 0.5 mW/cm2
0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2
1 0.1
94 8415
0.02 mW/cm2
1
10
100
VR - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Reverse Voltage
CD - Diode Capacitance (pF)
Ira - Reverse Light Current (µA)
1000 100 10 1
VR = 5 V
λ = 950 nm
80
E=0
60
f = 1 MHz
40
20
0.1
0.01
0.1
1
10
94 8414
Ee - Irradiance (mW/cm²)
Fig. 2 - Reverse Light Current vs. Irradiance
0
0.1
1
10
100
948407
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.6, 23-Aug-11
2
Document Number: 81522
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
1.2
S (λ)rel - Relative Spectral Sensitivity
1.0
0.8
0.6
0.4
0.2
0 750
94 8408
850
950
1050
λ - Wavelength (nm)
1150
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
PACKAGE DIMENSIONS in millimeters
5 ± 0.2
4 ± 0.2
A
C
BPW41N
Vishay Semiconductors
0°
10° 20°
30°
ϕ - Angular Displacement
Srel - Relative Radiant Sensitivity
40° 1.0
0.9
50°
0.8
60°
70° 0.7
80°
0.6 0.4 0.2 0 94 8406
Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement
Sensitive area
(2.05)
Chip position
19.8 - 0.8 8.9 ± 0.3 6.8 ± 0.3 < 0.5 (2.8)
< 0.65
Area not plane
0.45
+ 0.01 - 0.05
2.3 ± 0.2
2.5 nom.
+ 0.1
0.4 - 0.05
Drawing-No.: 6.544-5108.01-4 Issue:1; 01.07.96
96 12195
technical drawings according to DIN specifications
Rev. 1.6, 23-Aug-11
3
Document Number: 81522
.