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BPW41N Dataheets PDF



Part Number BPW41N
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon PIN Photodiode
Datasheet BPW41N DatasheetBPW41N Datasheet (PDF)

www.vishay.com BPW41N Vishay Semiconductors Silicon PIN Photodiode 94 8480 DESCRIPTION BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm .

  BPW41N   BPW41N


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www.vishay.com BPW41N Vishay Semiconductors Silicon PIN Photodiode 94 8480 DESCRIPTION BPW41N is a PIN photodiode with high speed and high radiant sensitivity in a black, side view plastic package with daylight blocking filter. Filter bandwidth is matched with 900 nm to 950 nm IR emitters. FEATURES • Package type: leaded • Package form: side view • Dimensions (in mm): 5 x 4 x 6.8 • Radiant sensitive area (in mm2): 7.5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times • Angle of half sensitivity: ϕ = ± 65° • Compliant to RoHS Directive to 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed detector for infrared radiation • Infrared remote control and free air data transmission systems, e.g. in combination with TSALxxxx series IR emitters PRODUCT SUMMARY COMPONENT BPW41N Ira (μA) 45 Note • Test condition see table “Basic Characteristics” ϕ (deg) ± 65 λ0.5 (nm) 870 to 1050 ORDERING INFORMATION ORDERING CODE BPW41N Note • MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM Side view ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Reverse voltage Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Tamb ≤ 25 °C t≤5s Connected with Cu wire, 0.14 mm2 VR PV Tj Tamb Tstg Tsd RthJA VALUE 60 215 100 - 40 to + 100 - 40 to + 100 260 350 UNIT V mW °C °C °C °C K/W Rev. 1.6, 23-Aug-11 1 Document Number: 81522 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BPW41N Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Breakdown voltage Reverse dark current Diode capacitance Open circuit Voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity IR = 100 μA, E = 0 V(BR) 60 VR = 10 V, E = 0 Iro VR= 0 V, f = 1 MHz, E = 0 CD VR= 3 V, f = 1 MHz, E = 0 CD Ee = 1 mW/cm2, λ = 950 nm Vo Ee = 1 mW/cm2, λ = 950 nm TKVo Ee = 1 mW/cm2, λ = 950 nm Ik Ee = 1 mW/cm2, λ = 950 nm TKIk Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 43 ϕ Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time VR = 10 V, λ = 950 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm VR = 10 V, RL = 1 kΩ, λ = 820 nm λp λ0.5 NEP tr tf TYP. 2 70 25 350 - 2.6 38 0.1 45 ± 65 950 870 to 1050 4 x 10-14 100 100 MAX. 30 40 BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) UNIT V nA pF pF mV mV/K μA %/K μA deg nm nm W/√ Hz ns ns Ira rel - Relative Reverse Light Current 1.4 1.2 VR = 5 V λ = 950 nm 1.0 0.8 0.6 0 20 40 60 80 100 94 8409 Tamb - Ambient Temperature (°C) Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature Ira - Reverse Light Current (µA) 100 λ = 950 nm 10 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 1 0.1 94 8415 0.02 mW/cm2 1 10 100 VR - Reverse Voltage (V) Fig. 3 - Reverse Light Current vs. Reverse Voltage CD - Diode Capacitance (pF) Ira - Reverse Light Current (µA) 1000 100 10 1 VR = 5 V λ = 950 nm 80 E=0 60 f = 1 MHz 40 20 0.1 0.01 0.1 1 10 94 8414 Ee - Irradiance (mW/cm²) Fig. 2 - Reverse Light Current vs. Irradiance 0 0.1 1 10 100 948407 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.6, 23-Aug-11 2 Document Number: 81522 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 1.2 S (λ)rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 750 94 8408 850 950 1050 λ - Wavelength (nm) 1150 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength PACKAGE DIMENSIONS in millimeters 5 ± 0.2 4 ± 0.2 A C BPW41N Vishay Semiconductors 0° 10° 20° 30° ϕ - Angular Displacement Srel - Relative Radiant Sensitivity 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 0 94 8406 Fig. 6 - Relative Radiant Sensitivity vs. Angular Displacement Sensitive area (2.05) Chip position 19.8 - 0.8 8.9 ± 0.3 6.8 ± 0.3 < 0.5 (2.8) < 0.65 Area not plane 0.45 + 0.01 - 0.05 2.3 ± 0.2 2.5 nom. + 0.1 0.4 - 0.05 Drawing-No.: 6.544-5108.01-4 Issue:1; 01.07.96 96 12195 technical drawings according to DIN specifications Rev. 1.6, 23-Aug-11 3 Document Number: 81522 .


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