DatasheetsPDF.com

BPW34S Dataheets PDF



Part Number BPW34S
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description Silicon PIN Photodiode
Datasheet BPW34S DatasheetBPW34S Datasheet (PDF)

Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S (E9087) feo06643 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Mer.

  BPW34S   BPW34S


Document
Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S (E9087) feo06643 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 ... 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher Packungsdichte q BPW 34 S/(E9087): geeignet für Vapor-Phase Löten und IR-Reflow Löten (JEDEC level 4) Anwendungen q Lichtschranken für Gleich- und Wechsellichtbetrieb q IR-Fernsteuerungen q Industrieelektronik q “Messen/Steuern/Regeln” 1.8 1.4 Approx. weight 0.1 g Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications q Photointerrupters q IR remote controls q Industrial electronics q For control and drive circuits Semiconductor Group 1 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 ±0.2 0.9 0.7 4.0 3.7 1.7 1.5 0...5 ˚ BPW 34 S Photosensitive area 2.65 mm x 2.65 mm Cathode lead GEO06863 Chip position 0...0.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.8 ±0.2 0.9 0.7 1.7 1.5 0...5 ˚ GEO06916 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Typ Type BPW 34 BPW 34 S BPW 34 S (E9087) Bestellnummer Ordering Code Q62702-P73 Q62702-P1602 Q62702-P1790 Semiconductor Group 2 1998-08-27 BPW34S Photosensitive area 2.65 mm x 2.65 mm Cathode lead 4.0 3.7 BPW 34 S (E9087) feo06862 BPW 34, BPW 34 S BPW 34 S (E9087) Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 ... + 85 32 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 80 (≥ 50) 850 400 ... 1100 Einheit Unit nA/Ix nm nm S λS max λ S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Quantenausbeute, λ = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage A L×B L×W ϕ 7.00 2.65 × 2.65 mm2 mm × mm ± 60 2 (≤ 30) 0.62 0.90 365 (≥ 300) Grad deg. nA A/W Electrons Photon mV IR Sλ η VO Semiconductor Group 3 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Description Kurzschlußstrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit Symbol Symbol Wert Value 80 20 Einheit Unit µA ns ISC tr, tf VF C0 TCV TCI NEP 1.3 72 – 2.6 0.18 4.1 × 10– 14 V pF mV/K %/K W √Hz cm · √Hz W D* 6.6 × 1012 Semiconductor Group 4 1998-08-27 BPW 34, BPW 34 S BPW 34 S (E9087) Relative spectral sensitivity Srel = f (λ) 100 OHF00078 Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) ΙP 10 3 µA OHF01066 Total power dissipation Ptot = f (TA) 10 4 mV 160 mW Ptot 140 120 100 OHF00958 S rel % 80 V 10 3 10 2 VO 60 10 1 40 ΙP 10 2 80 60 10 0 20 10 1 40 20 0 400 500 600 700 800 900 nm 1100 λ 10 -1 10 0 10 1 10 2 10 10 3 lx 10 4 EV 0 0 0 20 40 60 80 ˚C 100 TA Dark current IR = f (VR), E = 0 4000 OHF00080 Capacitance C = f (VR), f = 1 MHz, E = 0 100 OHF00081 Dark current IR = f (TA), VR = 10 V, E = 0 10 3 OHF00082 ΙR pA C pF 80 Ι R nA 10 2 3000 70 60 2000 50 40 30 10 1 1000 10 0 20 10 0 0 5 10 15 V VR 20 0 -2 10 10 -1 10 0 10 1 V 10 2 10 -1 0 20 40 60 VR 80 ˚C 100 TA Directional characteristics Sre.


BPW34FS BPW34S BPW36


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)