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Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing
5.4 4.9 4.5 4.3
BPW 34 BPW 34 S BPW 34 S (E9087)
feo06643
0.6 0.4
1.2 0.7
0.8 0.6
Cathode marking 4.0 3.7
Chip position
0.6 0.4 0.8 0.6
0.5 0.3
0.35 0.2
0.6 0.4
0 ... 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm
GEO06643
3.5 3.0
0.6 0.4 2.2 1.9
BPW 34
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm q Kurze Schaltzeit (typ. 20 ns) q DIL-Plastikbauform mit hoher Packungsdichte q BPW 34 S/(E9087): geeignet für Vapor-Phase Löten und IR-Reflow Löten (JEDEC level 4) Anwendungen q Lichtschranken für Gleich- und Wechsellichtbetrieb q IR-Fernsteuerungen q Industrieelektronik q “Messen/Steuern/Regeln”
1.8 1.4
Approx. weight 0.1 g
Features q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications q Photointerrupters q IR remote controls q Industrial electronics q For control and drive circuits
Semiconductor Group
1
1998-08-27
BPW 34, BPW 34 S BPW 34 S (E9087)
Chip position
0...0.1 1.2 1.1 0.3
1.1 0.9
0.2 0.1
6.7 6.2 4.5 4.3 1.8 ±0.2
0.9 0.7
4.0 3.7
1.7 1.5
0...5
˚
BPW 34 S
Photosensitive area 2.65 mm x 2.65 mm Cathode lead
GEO06863
Chip position
0...0.1 1.2 1.1 0.3
1.1 0.9
0.2 0.1
6.7 6.2 4.5 4.3 1.8 ±0.2
0.9 0.7
1.7 1.5
0...5
˚
GEO06916
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
Typ Type BPW 34 BPW 34 S BPW 34 S (E9087)
Bestellnummer Ordering Code Q62702-P73 Q62702-P1602 Q62702-P1790
Semiconductor Group
2
1998-08-27
BPW34S
Photosensitive area 2.65 mm x 2.65 mm
Cathode lead
4.0 3.7
BPW 34 S (E9087)
feo06862
BPW 34, BPW 34 S BPW 34 S (E9087)
Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value – 40 ... + 85 32 150 Einheit Unit °C V mW
Top; Tstg VR Ptot
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) Bezeichnung Description Fotoempfindlichkeit, VR = 5 V Spectral sensitivity Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit Symbol Symbol Wert Value 80 (≥ 50) 850 400 ... 1100 Einheit Unit nA/Ix nm nm
S
λS max λ
S = 10 % von Smax
Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Fläche Radiant sensitive area Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area Halbwinkel Half angle Dunkelstrom, VR = 10 V Dark current Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Quantenausbeute, λ = 850 nm Quantum yield Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage
A L×B L×W
ϕ
7.00 2.65 × 2.65
mm2 mm × mm
± 60 2 (≤ 30) 0.62 0.90 365 (≥ 300)
Grad deg. nA A/W Electrons Photon mV
IR Sλ
η
VO
Semiconductor Group
3
1998-08-27
BPW 34, BPW 34 S BPW 34 S (E9087)
Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characteristics (TA = 25 °C, standard light A, T = 2856 K) (cont’d) Bezeichnung Description Kurzschlußstrom, Ev = 1000 Ix Short-circuit current Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA Durchlaßspannung, IF = 100 mA, E = 0 Forward voltage Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit Symbol Symbol Wert Value 80 20 Einheit Unit µA ns
ISC tr, tf
VF C0 TCV TCI NEP
1.3 72 – 2.6 0.18 4.1 × 10– 14
V pF mV/K %/K W √Hz cm · √Hz W
D*
6.6 × 1012
Semiconductor Group
4
1998-08-27
BPW 34, BPW 34 S BPW 34 S (E9087)
Relative spectral sensitivity Srel = f (λ)
100
OHF00078
Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev)
ΙP
10 3 µA
OHF01066
Total power dissipation Ptot = f (TA)
10 4 mV
160 mW Ptot 140 120 100
OHF00958
S rel %
80
V
10 3
10 2
VO
60
10 1
40
ΙP
10 2
80 60
10 0
20
10 1
40 20
0 400 500 600 700 800 900 nm 1100 λ
10
-1
10 0
10 1
10 2
10 10 3 lx 10 4 EV
0
0
0
20
40
60
80 ˚C 100 TA
Dark current IR = f (VR), E = 0
4000
OHF00080
Capacitance C = f (VR), f = 1 MHz, E = 0
100
OHF00081
Dark current IR = f (TA), VR = 10 V, E = 0
10 3
OHF00082
ΙR
pA
C
pF 80
Ι R nA
10 2
3000
70 60
2000
50 40 30
10 1
1000
10 0
20 10
0 0 5 10 15 V VR 20
0 -2 10
10 -1
10 0
10 1
V 10 2
10 -1
0
20
40
60
VR
80 ˚C 100 TA
Directional characteristics Sre.