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TC58NVG2S0FBAI4

4 GBIT (512M x 8-BIT) CMOS NAND E2PROM

Description

TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks. The device has two 4320-byte static regist...

Toshiba

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TC58NVG2S0FBAI4 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM - Toshiba

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