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TC58NVG2S3EBAI5
4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
Description
TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 4096blocks. The device has two 2112-byte static registe...
Toshiba
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TC58NVG2S3EBAI5
4 GBIT (512M x 8-BIT) CMOS NAND E2PROM
- Toshiba
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