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BAW156

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Silicon Low Leakage Diode

Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Common anode configuration • Pb-fr...


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BAW156

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Silicon Low Leakage Diode Low-leakage applications Medium speed switching times Common anode configuration Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BAW156... BAW156 ! , ,  Type BAW156 Package SOT23 Configuration common anode Marking JZs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation Ts ≤ 31°C Junction temperature Storage temperature Ptot Tj Tstg Value 80 85 200 4.5 0.5 250 150 -65 ... 150 Unit V mA A mW °C Thermal Resistance Parameter Junction - soldering point2) BAW156 Symbol RthJS Value ≤ 360 Unit K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-20 BAW156... Electrical Characteristics at TA = 25°C, unless otherwise specified P...




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