Silicon Low Leakage Diode
Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times • Common anode configuration • Pb-fr...
Description
Silicon Low Leakage Diode Low-leakage applications Medium speed switching times Common anode configuration Pb-free (RoHS compliant) package1) Qualified according AEC Q101
BAW156...
BAW156
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Type BAW156
Package SOT23
Configuration common anode
Marking JZs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs
VR VRM IF IFSM
t=1s
Total power dissipation Ts ≤ 31°C Junction temperature Storage temperature
Ptot
Tj Tstg
Value 80 85 200
4.5 0.5 250
150 -65 ... 150
Unit V mA A
mW °C
Thermal Resistance Parameter Junction - soldering point2) BAW156
Symbol RthJS
Value ≤ 360
Unit K/W
1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance
1 2007-04-20
BAW156...
Electrical Characteristics at TA = 25°C, unless otherwise specified
P...
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