SCT2H12NY

SCT2H12NY N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1700V 1.15 4A 44W Features 1) Low on-resistance 2) Fast switching speed 3) Long creepage distance with no center lead 4) Simple to drive 5) Pb-free lead plating ; RoHS compliant Application ・Auxilialy power supplies ・Switch mode power supplies Outline TO-268-2L (2) Inner circuit (1) (3) (2) (1) Gate (2) Drain *1 (3) Source (1) *1 Body Diode (3) Packaging specifications Packing Embossed tape Reel size (mm) 330 Tape width (mm) Type Basic ordering unit (pcs) 24 400 Taping code TB Marking SCT2H12NY Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Tc = 100°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (tsurge<300nsec) Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge *3 PD Tj Tstg Value 1...