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BAS21H

ON Semiconductor

High Voltage Switching Diode

High Voltage Switching Diode BAS21H Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site ...


ON Semiconductor

BAS21H

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Description
High Voltage Switching Diode BAS21H Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 V Repetitive Peak Reverse Voltage VRRM 250 V Peak Forward Current IF 200 mA Repetitive Peak Forward Current IFRM 500 mA Non−Repetitive Peak Forward Surge IFSM(surge) 2.5 A Current, 60 Hz Non−Repetitive Peak Forward Current IFSM A (Square Wave, TJ = 25°C prior to surge) t = 1 ms 20 t = 10 ms 20 t = 100 ms 10 t = 1 ms 4 t=1s 1 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board, PD (Note 1) TA = 25°C Derate above 25°C 200 mW 1.57 mW/°C Thermal Resistance, Junction−to−Ambient Junction−to−Lead Junction−to−Top Junction and Storage Temperature Range RqJA RqJL RqJT TJ, Tstg 635 240 436 −55 to +150 °C/W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad www.onsemi.com HIGH VOLTAGE SWITCHING DIODE 1 CATHODE 2 ANODE MARKING 2 DIAGRAM 1 SOD−323 CASE 477 STYLE 1 JS M G G JS = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either locat...




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