MRF21120R6

Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. W - CDMA Performance @ - 45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch Output Power — 14 Watts (Avg.) Power Gain — 11.5 dB Efficiency — 16% Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 120 Watts CW Output Power Features Internally Matched for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Excellent Thermal Stability Characterized with Series Equivalent Large - Signal Impedance Parameters RoHS Compliant In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. Document Number: MRF21120 Rev. 11, 5/2006 M...