BLV920

DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV920 UHF power transistor Product specification Supersedes data of 1995 Apr 10 1997 Nov 17 Philips Semiconductors Product specification UHF power transistor FEATURES Internal input matching to achieve high power gain and easy design of wideband circuits Emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Base station transmitters in the 820 to 960 MHz range. handbook, halfpage BLV920 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange. 2 4 6 c b PINNING - SOT171A PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter base collector emitter emitter Fig.1 Simplified outline and symbol. Top view DESCRIPTION 1 3 5 MAM141 e QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 PL (W) 20 Gp (dB) ≥10 ηC (%) ≥ 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at th...