DISCRETE SEMICONDUCTORS
DATA SHEET
BLV910 UHF power transistor
Product specification 1995 Apr 11
Philips Semiconductor...
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV910 UHF power
transistor
Product specification 1995 Apr 11
Philips Semiconductors
Philips Semiconductors
Product specification
UHF power
transistor
FEATURES Internal input matching to achieve high power gain and easy design of wideband circuits Emitter ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. APPLICATIONS Base station transmitters in the 820 to 960 MHz range.
handbook, halfpage
BLV910
DESCRIPTION
NPN silicon planar epitaxial
transistor intended for common emitter class-AB operation. The
transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.
2
4
6
c b
PINNING - SOT171 PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter base collector emitter emitter Fig.1 Simplified outline and symbol.
Top view
DESCRIPTION
1 3 5
MAM141
e
QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION CW, class-AB f (MHz) 960 VCE (V) 26 PL (W) 10 Gp (dB) ≥ 11 ηC (%) ≥ 55
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of t...