BLV90

DISCRETE SEMICONDUCTORS DATA SHEET BLV90 UHF power transistor Product specification February 1996 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES BLV90 diffused emitter-ballasting resistors for an optimum temperature profile. gold metallization ensures excellent reliability. the device can be applied at rated output power without an external heatsink when it is mounted on a printed-circuit board (see Fig.6). The transistor has a 4-lead envelope with a ceramic cap (SOT-172D). All leads are isolated from the mounting base. QUICK REFERENCE DATA RF performance at Ta = 25 °C in a common-emitter class-B circuit.(1) MODE OF OPERATION Narrow band; CW VCE V 12.5 9.6 Note 1. Device mounted on a printed-circuit board (see Fig.6). PIN CONFIGURATION PINNING - SOT172D. PIN 1 handbook, halfpage f MHz 900 900 PL W 1 1 Gp dB > 7.5 typ. 7.0 ηC % > 50 typ. 57 DESCRIPTION emitter base collector emitter 2 1 3 4 3 2 4 Top view MSB007 Fig.1 Simplified outline. SOT172D. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. February 1996 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector...