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BLV32F

Advanced Semiconductor
Part Number BLV32F
Manufacturer Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Published Mar 23, 2005
Detailed Description BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of telev...
Datasheet PDF File BLV32F PDF File

BLV32F
BLV32F

Overview
BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.
h.
f.
amplifiers of television transmitters and transporters.
FEATURES: • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz • Omnigold™ Metalization System PACKAGE STYLE .
500 6L FLG MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC O O 4.
0 A 60 V 32 V 60 V 4.
0 V 82 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.
1 C/W O O O O 1= Collector 2= Base 3 and 4= Emitter CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE CC PG IC = 15 mA IE = 10 mA VCE = 32 V VCE = 25 V VCB = 25 V VCE = 25 V TC = 25 C O NONETEST CONDITIONS IC = 100 mA MINIMUM TYPICAL MAXIMUM 32 60 4.
0 5.
0 ...


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