Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D259
BLS3135-50 Microwave power transistor
Product specification Supersedes data of 1998 Apr 06 1999 Aug 16
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance.
handbook, halfpage
BLS3135-50
PINNING - SOT422A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION
1
APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) 3.1 to 3.5 VCB (V) 40 PL (W) 50 Gp (dB) typ. 8 ηC (%) typ. 40
3 2 3
MBK051
Fig.1 Simplified outline.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1999 Aug 16
2
Philips Semiconductors
Product specification
Microwave power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO ICM Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage peak collector current total power dissipation storage temperature operating junction temperature soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s RBE = 0 open collector tp ≤ 100 µs; δ ≤ 10% tp = 100 µs; δ = 10%; Tmb = 25 °C CONDITIONS open emitter − − − − − −65 − −
BLS3135-50
MIN.
MAX. 75 75 2 6 80 +200 200 235
UNIT V V V A W °C °C °C
THERMAL CHARACTERISTICS SYMBOL Zth j-h Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. Measured with IR-scan with 20 µm spotsize at hotspot. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO ICES IEBO hFE PARAMETER collector-base breakdown voltage collector leakage current collector leakage current emitter leakage current DC current gain CONDITIONS IC = 15 mA; open emitter VCB = 40 V; IE = 0 VCE = 40 V; VBE = 0 VEB = 1.5 V; IC = 0 VCB = 5 V; IC = 1.5 A MIN. 75 75 − − − 40 MAX. − − 1.5 3 0.3 − UNIT V V mA mA mA PARAMETER thermal impedance from junction to heatsink CONDITIONS tp = 100 µs; δ = 10%; note 1 tp = 300 µs; δ = 10%; note 1 VALUE 0.71 0.99 UNIT K/W K/W
collector-emitter breakdown voltage IC = 15 mA; VBE = 0
APPLICATION INFORMATION RF performance at Th = 25 °C in a common-base test circuit. MODE OF OPERATION Class-C; tp = 100 µs; δ = 10% f (GHz) 3.1 to 3.5 VCE (V) 40 PL (W) ≥50 typ. 55 Gp (dB) ≥7 typ. 8 ηC (%) ≥35 typ. 40
1999 Aug 16
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
handbook, halfpage
80
MCD758
handbook, halfpage
PL (W) 60
(2) (1) (3)
10 Gp 8
MCD759
(dB)
(2)
(1) (3)
6
40
4
2 20 0
(3)
0 0 2 4 6 8 10 PD (W)
−2
0
20
40
60
PL (W)
80
VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.5 GHz. (2) f = 3.3 GHz. (3) f = 3.1 GHz.
VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%. (1) f = 3.5 GHz. (2) f = 3.3 GHz. (3) f = 3.1 GHz.
Fig.2
Load power as a function of drive power; typical values.
Fig.3
Power gain as a function of load power; typical values.
handbook, halfpage
50 ηC
MCD760
handbook, halfpage
10 Gp
MCD761
(%) 40
(2)
(1) (3)
(dB) 8
Gp Return Losses
20 Return Losses (dB) 16
30
6
12
20
4
8
10
2
4
0 0 20 40 60 PL (W) 80
0 3.0
0 3.1 3.2 3.3 3.4 3.5 f (GHz)
VCB = 40 V; class-C; tp = 100 µs; δ = 10%. (1) f = 3.5 GHz. (2) f = 3.3 GHz. (3) f = 3.1 GHz.
VCB = 40 V; class-C; PL = 50 W; tp = 100 µs; δ = 10%.
Fig.4
Collector efficiency as a function of load power; typical values.
Fig.5
Power gain and input return losses as functions of frequency; typical values.
1999 Aug 16
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS3135-50
handbook, full pagewidth
30
30
40
C1
input C2
output
MCD762
Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (εr = 2.2), thickness 0.38 mm. The other side is unetched and serves as a ground plane. C1 = C2 = ATC 100A 5.1 pF
Fig.6 Component layou.