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BLS2731-110 Dataheets PDF



Part Number BLS2731-110
Manufacturers NXP
Logo NXP
Description Microwave power transistor
Datasheet BLS2731-110 DatasheetBLS2731-110 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides hig.

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DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. dbook, halfpage BLS2731-110 PINNING - SOT423A PIN 1 2 3 emitter base; connected to flange DESCRIPTION collector 1 APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the common base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) 2.7 to 3.1 VCB (V) 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL (W) >110 Gp (dB) >7 ηC (%) >35 3 2 3 MBK052 Fig.1 Simplified outline. 1998 Jan 30 2 Philips Semiconductors Product specification Microwave power transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO ICM Ptot Tstg Tj Tsld PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage peak collector current total power dissipation storage temperature operating junction temperature soldering temperature up to 0.2 mm from ceramic cap; t ≤ 10 s open emitter RBE = 0 open collector tp ≤ 100 µs; δ ≤ 10% tp = 100 µs; δ = 10%; Tmb = 25 °C CONDITIONS − − − − − −65 − − BLS2731-110 MIN. MAX. 75 75 2 12 500 +200 200 235 UNIT V V V A W °C °C °C THERMAL CHARACTERISTICS SYMBOL Zth j-h Note 1. Equivalent thermal impedance under pulsed microwave operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES ICBO ICES IEBO hFE PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector leakage current collector leakage current emitter leakage current DC current gain CONDITIONS IC = 30 mA; open emitter IC = 30 mA; VBE = 0 VCB = 40 V; IE = 0 VCE = 40 V; VBE = 0 VEB = 1.5 V; IC = 0 VCE = 5 V; IC = 3 A MIN. 75 75 − − − 40 MAX. − − 3 6 0.6 100 UNIT V V mA mA mA PARAMETER thermal impedance from junction to heatsink CONDITIONS tp = 100 µs; δ = 10%; note 1 VALUE 0.24 UNIT K/W APPLICATION INFORMATION RF performance at Th = 25 °C in a common base test circuit. MODE OF OPERATION f (GHz) 2.7 to 3.1 Class-C; tp = 100 µs; δ = 10% 2.7 to 2.9 2.9 to 3.1 VCE (V) 40 40 40 PL (W) ≥110 typ. 130 typ. 120 GP (dB) ≥7 typ. 8 typ. 7.5 ηC (%) ≥35 typ. 42 typ. 40 1998 Jan 30 3 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 handbook, halfpage 10 MBK284 Gp (dB) 8 ηC Gp 50 ηC (%) 40 PL halfpage handbook, (W) 120 100 2.9 GHz 140 MBK285 2.7 3.1 6 30 80 60 40 4 20 2 10 20 0 2.7 2.8 2.9 3 f (GHz) 0 3.1 0 10 12 14 16 18 PD (W) 20 VCE = 40 V; class-C; tp = 100 µs; δ = 10%. VCE = 40 V; class-C; tp = 100 µs; δ = 10%. Fig.2 Power gain and efficiency as functions of frequency; typical values. Fig.3 Load power as a function of drive power; typical values. MGM538 handbook, halfpage 12 handbook, halfpage 8 MGM539 (Ω) 8 Zi xi ZL (Ω) 4 RL 0 ri −4 XL 4 0 2.6 2.8 3 f (GHz) 3.2 −8 2.6 2.8 3 f (GHz) 3.2 VCB = 40 V; class-C; PL = 110 W. VCB = 40 V; class-C; PL = 110 W. Fig.4 Input impedance as function of frequency (series components); typical values. Fig.5 Load impedance as function of frequency (series components); typical values. 1998 Jan 30 4 Philips Semiconductors Product specification Microwave power transistor BLS2731-110 handbook, full pagewidth 30 30 40 L8 L2 L4 L6 input L3 L1 L7 L10 L9 L11 C3 C2 RC C1 output L13 L14 L5 L12 MGM540 Dimensions in mm. The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit. 1998 Jan 30 5 Philips Semiconductors Product specification Microwave power transistor List of components COMPONENT C1, C2 C3 RC DESCRIPTION mul.


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