BLF404

DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLF404 UHF power MOS transistor Product specification Supersedes data of 1997 Oct 28 1998 Jan 29 Philips Semiconductors Product specification UHF power MOS transistor FEATURES High power gain Easy power control Gold metallization Good thermal stability Withstands full load mismatch Designed for broadband operation. APPLICATIONS handbook, halfpage BLF404 PINNING PIN 1, 8 2, 3 4, 5 6, 7 source gate source drain DESCRIPTION 8 5 Communication transmitters in the VHF/UHF range with a nominal supply voltage of 12.5 V. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common source test circuit. MODE OF OPERATION CW class-AB f (MHz) 500 VDS (V) 12.5 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. PL (W) 4 Gp (dB) ≥10 ηD (%) ≥50 1998 Jan 29 2 Philips Semiconductors Product specification UHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction tempera...