BLF246B

DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 DESCRIPTION source source drain 1 gate 1 drain 2 gate 2 source source WARNING Product and environmental safety - toxic materials Fig.1 Simplified outline and symbol. 1 Top view 3 5 7 MBC826 BLF246B PIN CONFIGURATION andbook, halfpage 2 4 6 8 d2 g2 g1 d1 MBB157 s CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulatio...