RB751S-40

Technical Data Data Sheet N1725, Rev. A RB751S-40 SCHOTTKY BARRIER DIODE RB751S-40 Features  Small surface mounting type  Low reverse current and low forward voltage  High reliability Circuit Diagram SOD-523 Maximum Ratings@TA=25°C unless otherwise specified Parameter Peak Reverse Voltage DC Reverse Voltage Mean rectifying current Non-repetitive Peak Forward Surge Current @t=8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VRM VR IO IFSM PD RΘJA Tj Tstg Value 40 30 30 200 150 667 125 -55~+150 Units V V mA mA mW °C/W °C °C Electrical Characteristics@TA=25°C unless otherwise specified Parameter Reverse current* Forward voltage* Capacitance between terminals Symbol IR VF CT Test conditions VR=30V IF=1mA VR=1V,f=1MHz * Pulse width < 300 µs, duty cycle < 2% Min Typ -- --2 Max 0.5 0.37 - Units μA V pF  China - Germany - Korea - Singapore - United States   http://www.smc-diodes.com -...