BLF1820-70

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 65 W (PEP) – Gain = 12 dB – Efficiency = 32% – dim = −26 dBc Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed for broadband operation (1800 to 2000 MHz) Internally matched for ease of use. Top view 2 handbook, halfpage BLF1820-70 PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 3 MBK394 APPLICATIONS RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range. DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2000; f2 = 2000.1 VDS (V) 26 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PL (W) 65 (PEP) Gp (dB) >11 ηD (%) >30 dim (dBc) ≤−25 Fig.1 Simplified outline SOT502A. 2003 Feb 10 2 Philips Semiconductors Product specification ...