DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D438
BLF1043 UHF power LDMOS transistor
Objective specification Su...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D438
BLF1043 UHF power LDMOS
transistor
Objective specification Supersedes data of 2000 Feb 17 2000 Feb 23
Philips Semiconductors
Objective specification
UHF power LDMOS
transistor
FEATURES High power gain Easy power control Excellent ruggedness Source on mounting base eliminates DC isolators, reducing common mode inductance Designed for broadband operation (HF to 1 GHz).
handbook, halfpage
BLF1043
PINNING - SOT538A PIN 1 2 3 drain gate source DESCRIPTION
1
APPLICATIONS Communication transmitter applications in the UHF frequency range. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PL (W) 10 (PEP) 10 Gp (dB) >16 >16 ηD (%) >35 >45 dim (dBc) ≤−30 −
Top view 3
2
MBK905
Fig.1 Simplified outline.
2000 Feb 23
2
Philips Semiconductors
Objective specification
UHF power LDMOS
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rat...