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RB501V-40

GME

Schottky Barrier Diode

Production specification Schottky Barrier Diode FEATURES  High current rectifier schottky diode  Low voltage; Low ind...


GME

RB501V-40

File Download Download RB501V-40 Datasheet


Description
Production specification Schottky Barrier Diode FEATURES  High current rectifier schottky diode  Low voltage; Low inductance  For power supply Pb Lead-free RB501V-40 APPLICATIONS  High frequency rectification ORDERING INFORMATION Type No. Marking RB501V-40 4 SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 45 DC reverse voltage VR 40 Mean rectifying current IO 0.1 Peak forward surge current IFSM 1 Junction temperature Tj 125 Storage temperature Tstg -40 to+125 Unit V V A A ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward voltage Reverse current Capacitance between terminals Symbol Min. VF IR CT Typ. 6 Max. 0.55 0.34 30 Unit V μA pF Conditions IF=100mA IF=10mA VR=10v VR=10V,f=1MHz B021 Rev.A www.gmesemi.com 1 Production specification Schottky Barrier Diode RB501V-40 TYPICAL CHARACTERISTICS @ Ta=25℃ unless...




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