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BGY2016 Dataheets PDF



Part Number BGY2016
Manufacturers NXP
Logo NXP
Description UHF amplifier
Datasheet BGY2016 DatasheetBGY2016 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY2016 UHF amplifier module Product specification Supersedes data of 1999 Nov 24 2000 Jan 04 Philips Semiconductors Product specification UHF amplifier module FEATURES • 26 V nominal supply voltage • 16 W output power into a load of 50 Ω with an RF drive power of ≤20 mW. APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1990 MHz frequency band. DESCRIPTION The BGY2016 is a three-stage UHF amplifier module .

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DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D167 BGY2016 UHF amplifier module Product specification Supersedes data of 1999 Nov 24 2000 Jan 04 Philips Semiconductors Product specification UHF amplifier module FEATURES • 26 V nominal supply voltage • 16 W output power into a load of 50 Ω with an RF drive power of ≤20 mW. APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1990 MHz frequency band. DESCRIPTION The BGY2016 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate. handbook, halfpage BGY2016 PINNING - SOT365A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground DESCRIPTION 1 2 3 4 MSA447 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION CW f (MHz) 1805 to 1990 VS1 (V) 5 VS2 (V) 26 PL (W) ≥16 Gp (dB) ≥28 η (%) ≥30 ZS; ZL (Ω) 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb PARAMETER DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature Tmb = 25 °C CONDITIONS − − − −30 −10 MIN. 4.5 MAX. 5.5 28 120 20 +100 +90 V V mW W °C °C UNIT 2000 Jan 04 2 Philips Semiconductors Product specification UHF amplifier module CHARACTERISTICS Tmb = 25 °C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS = ZL = 50 Ω unless otherwise specified. SYMBOL f IS1 IS2 PL Gp ∆Gp Gp1 - Gp2 η H2 H3 VSWRin PARAMETER frequency supply current supply current load power power gain in band gain variation gain expansion efficiency second harmonic third harmonic input VSWR stability reverse intermodulation B AM bandwidth ruggedness VSWR ≤ 2 : 1 through all phases; PL ≤ 16 W; VS2 = 25 to 27 V Pcarrier = 16 W; Preverse = −40 dBc; fi = fc ±200 kHz corner frequency = 3 dB; Pcarrier = 16 W; modulation = 20% VSWR ≤ 5 : 1 through all phases f = 1805 to 1880 MHz; PL = 5 W f = 1930 to 1990 MHz; PL = 5 W Gp1 at PL = 160 mW; Gp2 at PL = 5 mW PL = 16 W PL = 16 W PL = 16 W PD < −60 dBm PD < 20 mW CONDITIONS − − 16 28 − − − 30 − − − − − 2 MIN. 1805 − 80 430 − − − − − − − − − − − − TYP. − − − BGY2016 MAX. 1990 UNIT MHz mA mA W dB dB dB dB % dBc dBc dBc dBc MHz 35 2 2 ±1 − −35 −40 2:1 −60 −53 − no degradation 2000 Jan 04 3 Philips Semiconductors Product specification UHF amplifier module APPLICATION INFORMATION BGY2016 handbook, full pagewidth C7 C5 C8 C6 Z1 R1 L1 R2 L2 Z2 C3 C1 50 Ω input C4 C2 50 Ω output MGM861 VS1 VS2 Fig.2 Test circuit. List of components (See Figs 2 and 3) COMPONENT C1, C2 C3, C4 C5, C6 C7, C8 L1, L2 R1, R2 Z1, Z2 Note 1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (εr = 4.5); thickness = 1 mm. DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip c.


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