Document
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D167
BGY2016 UHF amplifier module
Product specification Supersedes data of 1999 Nov 24 2000 Jan 04
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES • 26 V nominal supply voltage • 16 W output power into a load of 50 Ω with an RF drive power of ≤20 mW. APPLICATIONS • Base station transmitting equipment operating in the 1805 to 1990 MHz frequency band. DESCRIPTION The BGY2016 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate.
handbook, halfpage
BGY2016
PINNING - SOT365A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground DESCRIPTION
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION CW f (MHz) 1805 to 1990 VS1 (V) 5 VS2 (V) 26 PL (W) ≥16 Gp (dB) ≥28 η (%) ≥30 ZS; ZL (Ω) 50
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb PARAMETER DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature Tmb = 25 °C CONDITIONS − − − −30 −10 MIN. 4.5 MAX. 5.5 28 120 20 +100 +90 V V mW W °C °C UNIT
2000 Jan 04
2
Philips Semiconductors
Product specification
UHF amplifier module
CHARACTERISTICS Tmb = 25 °C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS = ZL = 50 Ω unless otherwise specified. SYMBOL f IS1 IS2 PL Gp ∆Gp Gp1 - Gp2 η H2 H3 VSWRin PARAMETER frequency supply current supply current load power power gain in band gain variation gain expansion efficiency second harmonic third harmonic input VSWR stability reverse intermodulation B AM bandwidth ruggedness VSWR ≤ 2 : 1 through all phases; PL ≤ 16 W; VS2 = 25 to 27 V Pcarrier = 16 W; Preverse = −40 dBc; fi = fc ±200 kHz corner frequency = 3 dB; Pcarrier = 16 W; modulation = 20% VSWR ≤ 5 : 1 through all phases f = 1805 to 1880 MHz; PL = 5 W f = 1930 to 1990 MHz; PL = 5 W Gp1 at PL = 160 mW; Gp2 at PL = 5 mW PL = 16 W PL = 16 W PL = 16 W PD < −60 dBm PD < 20 mW CONDITIONS − − 16 28 − − − 30 − − − − − 2 MIN. 1805 − 80 430 − − − − − − − − − − − − TYP. − − −
BGY2016
MAX. 1990
UNIT MHz mA mA W dB dB dB dB % dBc dBc dBc dBc MHz
35 2 2 ±1 − −35 −40 2:1 −60 −53 −
no degradation
2000 Jan 04
3
Philips Semiconductors
Product specification
UHF amplifier module
APPLICATION INFORMATION
BGY2016
handbook, full pagewidth
C7 C5
C8 C6
Z1
R1
L1
R2
L2
Z2
C3 C1 50 Ω input
C4 C2 50 Ω output
MGM861
VS1
VS2
Fig.2 Test circuit.
List of components (See Figs 2 and 3) COMPONENT C1, C2 C3, C4 C5, C6 C7, C8 L1, L2 R1, R2 Z1, Z2 Note 1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (εr = 4.5); thickness = 1 mm. DESCRIPTION electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip c.