DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D167
BGY1916 UHF amplifier module
Product specification Supers...
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D167
BGY1916 UHF amplifier module
Product specification Supersedes data of 1998 Apr 09 1998 May 27
Philips Semiconductors
Product specification
UHF amplifier module
FEATURES 26 V nominal supply voltage 16 W output power into a load of 50 Ω with an RF drive power of ≤63 mW. APPLICATIONS Base station transmitting equipment operating in the 1930 to 1990 MHz frequency band. DESCRIPTION The BGY1916 is a three-stage UHF amplifier module in a SOT365A package with a plastic cap. It consists of three
NPN silicon planar
transistor dies mounted together with matching and bias circuit components on a metallized ceramic AlN substrate.
handbook, halfpage
BGY1916
PINNING - SOT365A PIN 1 2 3 4 Flange RF input VS1 VS2 RF output ground DESCRIPTION
1
2
3
4
MSA447
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Tmb = 25 °C. MODE OF OPERATION CW f (MHz) 1930 to 1990 VS1 (V) 5 VS2 (V) 26 PL (W) ≥16 Gp (dB) ≥24 η (%) ≥30 ZS; ZL (Ω) 50
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS1 VS2 PD PL Tstg Tmb PARAMETER DC supply voltage DC supply voltage input drive power load power storage temperature operating mounting base temperature Tmb = 25 °C CONDITIONS 4.5 − − − −30 −10 MIN. 28 120 20 +100 +90 MAX. 5.5 V V mW W °C °C UNIT
1998 May 27
2
Philips Semiconductors
Product specification
UHF amplifier module
CHARACTERISTICS Tmb = 25 °C; VS1 = 5 V; VS2 = 26 V; PL = 16 W; ZS...