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BGY148A

NXP

HF amplifier

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D188 BGY148A; BGY148B HF amplifier modules Product specification S...


NXP

BGY148A

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Description
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D188 BGY148A; BGY148B HF amplifier modules Product specification Supersedes data of 1997 Jul 14 1998 May 13 Philips Semiconductors Product specification HF amplifier modules FEATURES Single 6 V nominal supply voltage 3 W output power Easy control of output power by DC voltage Silicon bipolar technology Standby current less than 100 µA. APPLICATIONS Portable communication equipment operating in the 400 to 440 MHz and 430 to 488 MHz frequency ranges respectively. DESCRIPTION The BGY148A and BGY148B are three-stage UHF amplifier modules in a SOT421A package. Each module consists of three NPN silicon planar transistor dies mounted together with matching and bias circuit components on a metallized ceramic substrate. The modules produce an output power of 3 W into a load of 50 Ω with an RF drive power of 10 mW. QUICK REFERENCE DATA RF performance at Tmb = 25 °C. TYPE BGY148A BGY148B MODE OF OPERATION CW CW f (MHz) 400 to 440 430 to 488 VS (V) 6 6 PL (W) ≥3 ≥3 handbook, halfpage BGY148A; BGY148B PINNING - SOT421A PIN 1 2 3 4 Flange RF input VC VS RF output ground DESCRIPTION 1 Top view 2 3 4 MSA483 Fig.1 Simplified outline (SOT421A). Gp (dB) ≥24.8 ≥24.8 η (%) typ. 53 typ. 53 ZS; ZL (Ω) 50 50 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VS VC PD PL Tstg Tmb Note 1. In order to control the mounting-base temperature, proper heatsinking of the underside of the device i...




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