BGR269

BGR269 200 MHz, 35 dB gain reverse amplifier Rev. 6 — 5 August 2010 Product data sheet 1. Product profile CAUTION 1.1 General description High performance amplifier in a SOT115J package, operating at a voltage supply of 24 V (DC). This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Excellent linearity „ Silicon nitride passivation „ Rugged construction „ Gold metallization ensures excellent reliability „ 35 dB amplification up to 200 MHz 1.3 Applications „ Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz frequency range 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Gp power gain Itot total current Conditions f = 5 MHz f = 200 MHz VB = 24 V Min Typ 34.5 35 35 - [1] 145 160 Max Unit 35.5 dB 36 dB 175 mA [1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB = 35 V. NXP Semiconductors BGR269 200 MHz, 35 dB gain reverse amplifier 2. Pinning information Table 2. Pin 1 2 3 5 7 8 9 Pinning Description input common common +VB common common output Simplified outline 13579 Symbol 5 1 9 23 78 sym095 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BGR269 - rectangular single-ended package; aluminium flange; SOT115J 2 vertical mounting holes; 2 × 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-pla...