BGD502

DISCRETE SEMICONDUCTORS DATA SHEET BGD502; BGD504 CATV power doubler amplifier modules Product specification Supersedes data of February 1994 File under Discrete Semiconductors, SC16 1995 Oct 25 Philips Semiconductors Product specification CATV power doubler amplifier modules FEATURES Excellent linearity Extremely low noise Silicon nitride passivation Rugged construction TiPtAu metallized crystals ensure optimal reliability. DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range of 40 to 550 MHz at a voltage supply of 24 V (DC). QUICK REFERENCE DATA SYMBOL Gp power gain BGD502 BGD504 power gain BGD502 BGD504 Itot total current consumption (DC) VB = 24 V f = 550 MHz PARAMETER CONDITIONS f = 50 MHz PINNING - SOT115C PIN 1 2 3 5 7 8 9 input common common +VB common common output DESCRIPTION fpage BGD502; BGD504 1 2 3 5 7 8 9 MSB004 - 2 Side view Fig.1 Simplified outline. MIN. 18 19.5 18.8 20.2 − MAX. 19 20.5 20.8 22.2 435 UNIT dB dB dB dB mA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Vi Tstg Tmb RF input voltage storage temperature operating mounting base temperature PARAMETER − −40 −20 MIN. MAX. 60 +100 +100 UNIT dBmV °C °C 1995 Oct 25 2 Philips Semiconductors Product specification CATV power doubler amplifier modules CHARACTERISTICS Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain BGD502 BGD504 power gain BGD502 BGD504 SL FL S11 s...