BGA427

BGA 427 Si-MMIC-Amplifier in SIEGET® 25-Technologie Preliminary data Cascadable 50 Ω-gain block Unconditionally stable Gain |S21 |2 = 18,5 dB at 1.8 GHz (appl.1) gain |S21 |2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD =3V, ID=9.4mA) Noise figure NF = 2.2 dB at 1.8 GHz typical device voltage VD = 2 V to 5 V Reverse isolation < 35 dB (appl.2) 4 3 4 2 1 VPS05605 3 +V OUT Circuit Diagram IN 1 2 GND EHA07378 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BGA 427 Parameter Marking Ordering Code BMs Q62702-G0067 Pin Configuration 1, IN 2, GND Symbol Package 3, +V 4, Out Value 25 6 150 -10 150 -65 ...+150 -65 ...+150 SOT-343 Unit mA V mW dBm °C Maximum Ratings Device current Device voltage Total power dissipation, T S ≤ tbd °C ID VD,+V Ptot PRFin Tj TA T stg 1) RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS ≤ tbd K/W 1) TS is measured on the emitter (GND) lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -11-1998 BGA 427 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. AC characteristics VD = 3 V, Zo = 50W, Testfixture Appl..1 Insertion power gain |S21| 2 f = 0.1 GHz f = 1 GHz f = 1.8 GHz Reverse isolation f = 1.8 GHz Noise figure f = 0.1 GHz f = 1 GHz f = 1.8 GHz Intercept point at the output f = 1.8 GHz Return loss input f = ...