BG3130

DUAL N-Channel MOSFET Tetrode Two gain controlled input stage for UHF and VHF -tuners e.g. (NTSC, PAL) Two AGC amplifiers in one single package Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation at gain reduction Pb-free (RoHS compliant) package Qualified according AEC Q101 BG3130... 4 5 6 3 2 1 BG3130 BG3130R $# * )  " ! AGC RF Input RG1 G2 G1 VGG GND Drain RF Output + DC ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BG3130 BG3130R Package SOT363 SOT363 Pin Configuration 1=G1* 2=G2 3=D* 4=D** 5=S 1=G1* 2=S 3=D* 4=D** 5=G2 Marking 6=G1** KAs 6=G1** KHs * For amp. A; ** for amp. B 180° rotated tape loading orientation available 1 2007-06-01 BG3130... Maximum Ratings Parameter Symbol Drain-source voltage Continuous drain current Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature VDS ID ±IG1/2SM ±VG1/G2S Ptot Tstg Tch Thermal Resistance Parameter Symbol Channel - soldering point1) Rthchs 1For calculation of RthJA please refer to Application Note Thermal Resistance Value 8 25 1 6 200 -55 ... 150 150 Value ≤ 280 Unit V mA V mW °C Unit K/W 2 2007-06-01 BG3130... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-so...