DUAL N-Channel MOSFET Tetrode
BG3123...
DUAL N-Channel MOSFET Tetrode
4 5 6
• Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, P...
Description
BG3123...
DUAL N-Channel MOSFET Tetrode
4 5 6
Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) Optimized for UHF (amp. B) and VHF (amp. A) Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation at gain reduction
BG3123
6 5 4
2 1
3
VPS05604
BG3123R
6 5 4
Drain AGC HF Input G2 G1 R G1 VGG
HF Output + DC
B A
1 2 3 1
B A
2 3
GND
EHA07461
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BG3123 BG3123R***
Package SOT363 SOT363 1=G1* 2=G2 1=G1** 2=S
Pin Configuration 3=D* 3=D** 4=D** 4=D* 5=S 5=G2
Marking 6=G1** KOs 6=G1* KRs
* For amp. A; ** for amp. B
*** Target Data 180° rotated tape loading orientation available
Maximum Ratings Parameter Drain-source voltage Continuous drain current amp. A amp. B Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature ±IG1/2SM ±V G1/G2S Ptot Tstg Tch Symbol VDS ID 25 20 1 6 200 -55 ... 150 150 V mW °C Value 8 Unit V mA
1
Feb-27-2004
BG3123...
Thermal Resistance Parameter Channel - soldering point 1)
Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V...
Similar Datasheet