BG3123

BG3123... DUAL N-Channel MOSFET Tetrode 4 5 6 Two gain controlled input stages for UHF and VHF -tuners e.g. (NTSC, PAL) Optimized for UHF (amp. B) and VHF (amp. A) Integrated gate protection diodes High AGC-range, low noise figure, high gain Improved cross modulation at gain reduction BG3123 6 5 4 2 1 3 VPS05604 BG3123R 6 5 4 Drain AGC HF Input G2 G1 R G1 VGG HF Output + DC B A 1 2 3 1 B A 2 3 GND EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BG3123 BG3123R*** Package SOT363 SOT363 1=G1* 2=G2 1=G1** 2=S Pin Configuration 3=D* 3=D** 4=D** 4=D* 5=S 5=G2 Marking 6=G1** KOs 6=G1* KRs * For amp. A; ** for amp. B *** Target Data 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current amp. A amp. B Gate 1/ gate 2-source current Gate 1/ gate 2-source voltage Total power dissipation Storage temperature Channel temperature ±IG1/2SM ±V G1/G2S Ptot Tstg Tch Symbol VDS ID 25 20 1 6 200 -55 ... 150 150 V mW °C Value 8 Unit V mA 1 Feb-27-2004 BG3123... Thermal Resistance Parameter Channel - soldering point 1) Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage ID = 10 µA, VG1S = 0 V, VG2S = 0 V Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 V, VDS = 0 V Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 V, VDS = 0 V Gate1-source leakage current VG1S = 6 V, VG2S = 0 V Gate2-source leakage current VG2S = 8 V...