BFY90
MECHANICAL DATA Dimensions in mm (inches)
4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178)
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
5.33 (0.210) 4.32 (0.170)
0.48 (0.019) 0.41 (0.016) dia.
12.7 (0.500) min.
DESCRIPTION
The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz.
2.54 (0.100) Nom.
4 3 2 1
TO72
Pin 1 – Emitter Pin 2 –Base Pin 3 – Collector Pin 4 – Connected to Case
ABSOLUTE MAXIMUM RATINGS
VCBO VCER VCEO VEBO IC(AV) ICM Ptot Tj Tstg, Collector – Base Voltage
(TA= 25°C unless otherwise stated)
30V 30V 15V 2.5v 25mA 50mA 200mW°C 200°C –65 to +200°C
Collector – Emitter Voltage (RBE £ 50W ) Collector – Emitter Voltage Emitter – Base Voltage Average Collector Current Peak Collector Current (f ³1MHz) Power Dissipation at Tamb = 25°C Storage Temperature Junction Temperature
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
Prelim. 12/99
BFY90
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
Parameter
ICBO V(BR)CEO* V(BR)CER* VCEK h21E Collector Cut Off Current
Test Conditions
VCB = 15V IE = 0 IB = 0 RBE £ 50W IC = 2mA IC = 25mA IC = 2mA IC = 25mA IE = 0. IC = 0 IC = 2mA RG RG
optimum
Min.
15 30
Typ.
Max.
10
Unit
nA V
Collector Emitter Breakdown Voltage IC = 10mA Collector Emitter Breakdown Voltage IC = 10mA Collector Emitter Knee Voltage Static Forward Current Transfer Ratio DYNAMIC CHARACTERISTICS VCE = 5V f = 500MHz VCE = 5V f = 500MHz VCB = 10V f = 1MHz VCE = 5V f = 1MHz VCE = 5V f = 100kHz VCE = 5V f = 200MHz VCE = 5V f = 500MHz VCE = 5V f = 800MHz VCE = 10V f = 200MHz VCE = 10V f1 = 202MHz IC = 10mA VCE = 1V VCE = 1V
0.75 25 20 150 125 —
1 GHz 1.3 1.5 0.8 4 3.5 dB 5 5 21 dB pF pF
fT
Transition Frequency
C22b(1) C12e(2)
Output Capacitance Open-Circuit Reverse Transfer Capacitance
IC = 2mA
optimum
NF
Noise Figure
IC = 2mA RG = 50W IC = 2mA RG
optimum
Gp
Power Gain
IC = 14mA IC = 14mA f2= 205MHz
PO(2)
Output Power
Output SWR £ 2 TOS sortie 208MHz
£
10
mW
2
dIM* = - 30dB at 2 f2 - f1 =
THERMAL DATA
Rth(j-a) Rth(j-c) Junction-ambient thermal resistance Junction-case thermal resistance
£ £
0.875 Max 0.575 Max
°C/W °C/W
* Pulse test tp = 300ms , d £ 2% (1) Shield Lead (case) not connected * Intermodulation Distortion (2) Shield Lead (case) grounded
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
Prelim. 12/99
.