BFY50

BFY50/51 MEDIUM POWER AMPLIFIER DESCRIPTION The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj Parameter BFY50 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Total Dissipation at T amb ≤ 25 C at T case ≤ 25 o C St orage Temperature Max. Operating Junction Temperature o Value BFY51 60 30 6 1 1.5 0.8 5 -65 to 200 200 80 35 Unit V V V A A W W o o C C 1/5 November 1997 BFY50/BFY51 THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 35 218 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s for BFY50 V CB = 60 V V CB = 60 V for BFY51 V CB = 40 V V CB = 40 V V EB = 5 V V EB = 5 V I C = 100 µA for BFY50 for BFY51 I C = 30 mA for BFY50 for BFY51 I C = 100 µA Min. Typ . Max. 50 2.5 50 2.5 50 2.5 80 60 35 30 6 Un it nA µA nA µA nA µA V V V V V T ca s e = 100 C o o T ca s e = 100 C T case = 100 oC I EBO V (BR)CBO Emitter Cut-off Current (I C = 0) Collector-Base Breakdown Voltage (IE = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltag...