BFY196

BFY196 HiRel NPN Silicon RF Transistor HiRel Discrete and Microwave Semiconductor For low noise, high-gain amplifiers up to 2GHz. For linear broadband amplifiers Hermetically sealed microwave package fT= 6,5 GHz F = 3 dB at 2 GHz Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5611/006 Type Variant No. 07 (tbc.) 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY196 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration C E B E Package Micro-X1 P: Professional Quality, H: High Rel Quality, S: Space Quality, Ordering Code: Ordering Code: Ordering Code: Q62702F1684 on request on request (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY196 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage, VBE=0 Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 2), 3) TS ≤ 105°C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 3.) Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj Top Tstg Rth JS Values 12 20 20 2 100 12 700 200 -65...+200 -65...+200 1) Unit V V V V mA mA mW °C °C °C K/W < 135 Notes.: 1) The maximum permissible base current for VFBE measurements is 50mA (spotmeasurement duration < 1s) 2) At TS = + 105 °C. For TS > + 105 °C derating is required. 3) TS is measured on the collector lead at the so...