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BFY183

Infineon Technologies AG

HiRel NPN Silicon RF Transistor

BFY183 HiRel NPN Silicon RF Transistor BFY183(ES) Features 4  For low noise, high-gain broadband amplifiers at col...


Infineon Technologies AG

BFY183

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Description
BFY183 HiRel NPN Silicon RF Transistor BFY183(ES) Features 4  For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA  Hermetically sealed microwave package  fT= 8GHz F = 2.3 dB at 2 GHz 1 Product validation  Space Qualified ESCC Detail Spec. No.: 5611/006 Type Variant No. 05 Description ESD: Electrostatic discharge sensitive device, observe handling precautions! Table 1 Product information Type Comment Pin Configuration 1 2 3 4 BFY183(ES) BFY183(P)1 For flight use C E B E Not for flight use1 1 (P) parts have the same fit, form and function as (ES) parts, no screening acc. to Chart F3 in ESCC Generic Specification No. 5010 3 2 Package Micro-X1 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 1 of 6 IFAG PSS RFS D2 HIR Issue 5, January 2022 HiRel NPN Silicon RF Transistor BFY183(ES) Table of contents Table of contents Features ....................................................................................................................................... 1 Product validation .......................................................................................................................... 1 Description .................................................................................................................................... 1 Table of contents ..............................................................................................




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