BFY183
HiRel NPN Silicon RF Transistor
BFY183(ES)
Features
4
For low noise, high-gain broadband amplifiers
at col...
BFY183
HiRel
NPN Silicon RF
Transistor
BFY183(ES)
Features
4
For low noise, high-gain broadband amplifiers
at collector currents from 2 mA to 30 mA
Hermetically sealed microwave package
fT= 8GHz
F = 2.3 dB at 2 GHz
1
Product validation
Space Qualified
ESCC Detail Spec. No.: 5611/006
Type Variant No. 05
Description
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Table 1
Product information
Type
Comment
Pin Configuration
1
2
3
4
BFY183(ES) BFY183(P)1
For flight use
C
E
B
E
Not for flight use1
1 (P) parts have the same fit, form and function as (ES) parts, no screening acc. to Chart F3 in ESCC Generic Specification No. 5010
3 2
Package Micro-X1
Datasheet www.infineon.com
Please read the Important Notice and Warnings at the end of this document 1 of 6
IFAG PSS RFS D2 HIR Issue 5, January 2022
HiRel
NPN Silicon RF
Transistor
BFY183(ES) Table of contents
Table of contents
Features ....................................................................................................................................... 1 Product validation .......................................................................................................................... 1 Description .................................................................................................................................... 1 Table of contents ..............................................................................................