Document
12 MILS 24 MILS
• GENERAL PURPOSE SILICON DIODES • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196
VRM
V(pk) 80 180 250 270 80 180 250
VRWM
V(pk) 70 180 225 225 70 180 225
I O I O IFSM
TA=+150°C tp = 1/120 S TA=25°C
mA mA
A
200 50 200 50 200 50 400 150 200 50 200 50 200 50
2 2 2 5 2 2 2
TYPE
CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196
VF(1)
V dc
0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0
IR1 at VRWM IR2 at VRM IR3 at VRWM
TA+25°C
TA+25°C
TA+150°C
nA dc
25 25 25 50 25 25 25
µA µA dc
100 5 100 5 100 5 50 25 100 5 100 5 100 5
CAP @VR =4V
pF
– – – 2.0 – – –
NOTE 1
AT 100mA (pulsed) except for CD645 which is at 400mA .