GENERAL PURPOSE SILICON DIODES
12 MILS 24 MILS
• GENERAL PURPOSE SILICON DIODES • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE...
Description
12 MILS 24 MILS
GENERAL PURPOSE SILICON DIODES ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196
VRM
V(pk) 80 180 250 270 80 180 250
VRWM
V(pk) 70 180 225 225 70 180 225
I O I O IFSM
TA=+150°C tp = 1/120 S TA=25°C
mA mA
A
200 50 200 50 200 50 400 150 200 50 200 50 200 50
2 2 2 5 2 2 2
TYPE
CD483B CD485B CD486B CD645 CD5194 CD5195 CD5196
VF(1)
V dc
0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0 0.8 - 1.0
IR1 at VRWM IR2 at VRM IR3 at VRWM
TA+25°C
TA+25°C
TA+150°C
nA dc
25 25 25 50 25 25 25
µA µA dc
100 5 100 5 100 5 50 25 100 5 100 5 100 5
CAP @VR =4V
pF
– – – 2.0 – – –
NOTE 1
AT 100mA (pulsed) except for CD645 which is at 400mA ...
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