BFX30

DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX30 PNP switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 16 Philips Semiconductors Product specification PNP switching transistor FEATURES High current (max.600 mA) Low voltage (max. 65 V). APPLICATIONS Switching applications. DESCRIPTION PNP transistor in a TO-39 metal package. PINNING PIN 1 2 3 emitter base BFX30 DESCRIPTION collector, connected to case 1 handbook, halfpage 2 2 3 3 MAM334 1 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = −10 mA; VCE = −400 mV IC = −50 mA; VCE = −10 V; f = 100 MHz ICon = −150 mA; IBon = −15 mA; IBoff = 10 mA open emitter open base CONDITIONS MIN. − − − − 50 100 − TYP. − − − − 90 − − MAX. −65 −65 −600 600 200 − 300 MHz ns UNIT V V mA mW 1997 Apr 16 2 Philips Semiconductors Product specification PNP switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient tem...