BFW92

BFW92 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 94 9308 13623 1 BFW92 Marking: BFW92 Plastic case (TO 50) 1 = Collector, 2 = Emitter, 3 = Base Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 300 150 –55 to +150 Unit V V V mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 300 Unit K/W Document Number 85040 Rev. 3, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) BFW92 Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 25 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 1 mA VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Symbol Min Typ Max Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V...