BFV421

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BFV421 PNP high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 23 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES High voltage High transition frequency Low output capacitance. APPLICATIONS Primarily intended for video applications (monitors). 1 handbook, halfpage BFV421 PINNING PIN 1 2 3 base collector emitter DESCRIPTION DESCRIPTION PNP transistor in a plastic TO-92; SOT54 package. NPN complement: BFV420. 2 3 2 1 3 MAM285 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −140 −100 −5 −100 −100 −100 830 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 23 2 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; note 1 VALUE 150 BFV421 UNIT K/W 1. Transistor mounted on a printed-circuit board; maximum lead length 4 mm; mount...