BFU540

DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product specification Supersedes data of 2002 Jan 28 2003 Jun 12 Philips Semiconductors Product specification NPN SiGe wideband transistor FEATURES Very high power gain Very low noise figure High transition frequency Emitter is thermal lead Low feedback capacitance 45 GHz SiGe process. APPLICATIONS RF front end Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.) Radar detectors Pagers Satellite television tuners (SATV) High frequency oscillators. Marking code: A4. 2 Top view 1 MSB842 BFU540 PINNING PIN 1 2 3 4 emitter base emitter collector DESCRIPTION handbook, halfpage 3 4 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain maximum power gain noise figure Ts ≤ 98 °C IC = 40 mA; VCE = 2 V; Tj = 25 °C IC = 2 mA; VCE = 2 V; f = 2 GHz; ΓS = Γopt CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. open emitter collector-emitter voltage open base CONDITIONS MIN. − − − − 70 − TYP. − − 40 − 140 20 0.9 MAX. 9 2.3 50 115 210 − − d...