BFT93

DISCRETE SEMICONDUCTORS DATA SHEET BFT93 PNP 5 GHz wideband transistor Product specification November 1992 NXP Semiconductors PNP 5 GHz wideband transistor Product specification BFT93 DESCRIPTION PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and BFR93A. PINNING PIN DESCRIPTION Code: X1p 1 base 2 emitter 3 collector lfpage 3 1 Top view 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCBO VCEO Ic Ptot fT Cre GUM F Vo collector-base voltage open emitter collector-emitter voltage open base DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure output voltage up to Ts = 95 C; note 1 IC = 30 mA; VCE = 5 V; f = 500 MHz; Tj = 25 C IC = 2 mA; VCE = 5 V; f = 1 MHz IC = 30 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 10 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C dim = 60 dB; IC = 30 mA; VCE = 5 V; RL = 75 ; f(pqr) = 493.25 MHz Note 1. Ts is the temperature at the soldering point of the collector tab. TYP.     5 MAX. UNIT 15 V 12 V 35 mA 300 mW  GHz 1  pF 16.5  ...