BFT92
PNP Silicon RF Transistor
For broadband amplifiers up to 2 GHz
3
at collector currents up to 20 mA
Complemen...
BFT92
PNP Silicon RF
Transistor
For broadband amplifiers up to 2 GHz
3
at collector currents up to 20 mA
Complementary type: BFR 92P (
NPN)
2 1
VPS05161
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package
BFT92
Maximum Ratings Parameter
W1s
1=B
2=E
3=C
SOT23
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Value
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 78 °C 1) Junction temperature Ambient temperature Storage temperature Thermal Resistance
15 20 20 2 25 3 200 150 -65 ... 150 -65 ... 150
V
mA mW °C
Junction - soldering point 2)
RthJS
360
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-16-2001
BFT92
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 15 mA, VCE = 8 V hFE 15 50 IEBO 10 ICBO 100 V(BR)CEO 15 typ. max.
Unit
V nA µA -
2
Jul-16-2001
BFT92
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = ...
