Document
BFT92
PNP 5 GHz wideband transistor
Rev. 3 — 22 January 2016
Product data sheet
1. Product profile
1.1 General description
PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR92 and BFR92A.
1.2 Features and benefits
High power gain Low intermodulation distortion
1.3 Applications
Oscilloscopes and spectrum analyzers Radar systems RF wideband amplifiers
1.4 Quick reference data
Table 1. Symbol VCBO VCEO IC Ptot fT Cre GUM
NF
Quick reference data Parameter collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance maximum unilateral power gain noise figure
dim
intermodulation distortion
Conditions open emitter open base
up to Ts = 95 C IC = 14 mA; VCE = 10 V; f = 500 MHz IC = 2 mA; VCE = 10 V; f = 1 MHz IC = 14 mA; VCE = 10 V; f = 500 MHz Tamb = 25 C; IC = 5 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; RL = 75 ; Vo = 150 mV; Tamb = 25 C; f(p + q-r) = 493.25 MHz
[1] Ts is the temperature at the soldering point of the collector tab.
Min Typ Max Unit
- - 20 V
- - 15 V
- - 25 mA
[1] -
-
300 mW
- 5 - GHz
- 0.7 - pF
- 18 - dB
- 2.5 - dB
- 60 - dB
NXP Semiconductors
BFT92
PNP 5 GHz wideband transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description base emitter collector
Simplified outline
Graphic symbol
DDD
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BFT92
TO-236AB Plastic surface mounted package; 3 leads
Version SOT23
4. Marking
Table 4. Marking codes Type number BFT92
Marking code W1%
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VCBO VCEO VEBO IC ICM Ptot Tstg Tj
collector-base voltage collector-emitter voltage emitter-base voltage DC collector current peak collector current total power dissipation storage temperature junction temperature
open emitter open base open collector
f > 1 MHz up to Ts = 95 C
[1] Ts is the temperature at the soldering point of the collector tab.
Min Max Unit
- 20 V
- 15 V
- 2 V
- 25 mA
- 35 mA
[1] -
300 mW
65 150 C
- 175 C
BFT92
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 January 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
2 of 10
NXP Semiconductors
BFT92
PNP 5 GHz wideband transistor
6. Thermal characteristics
Table 6. Symbol Rth j-s
Thermal characteristics Parameter thermal resistance from junction to soldering point
[1] Ts is the temperature at the soldering point of the collector tab.
7. Characteristics
Conditions up to Ts = 95 C
Typ Unit [1] 260 K/W
Table 7. Characteristics Tj = 25 C unless otherwise specified.
Symbol Parameter
ICBO
collector cut-off current
hFE
DC current gain
fT
transition frequency
Cc Ce Cre GUM
collector capacitance emitter capacitance feedback capacitance maximum unilateral power gain
NF
noise figure
Vo
output voltage
Conditions
Min
IE = 0; VCB = 10 V
-
IC = 14 mA; VCE = 10 V
20
IC = 14 mA; VCE = 10 V;
-
f = 500 MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 2 mA; VCE = 10 V; f = 1 MHz
IC = 14 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C
IC = 5 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 C
[1] -
-
dim = 60 dB (DIN 45004B); IC = 14 mA;
-
VCE = 10 V; RL = 75 ;
Vp = Vo at dim = 60 dB; fp = 495.25 MHz;
Vq = Vo 6 dB; fq = 503.25 MHz;
Vr = Vo 6 dB; fr = 505.25 MHz;
measured at f(p+q-r) = 493.25 MHz.
Typ Max Unit - 50 nA 50 5 - GHz
0.75 - pF 0.8 - pF 0.7 - pF 18 - dB
2.5 - dB
150 - mV
[1]
GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM
=
10
log
-----------------------S---2--1----2---------------------1 – S11 21 – S22 2
dB
BFT92
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 22 January 2016
© NXP Semiconductors N.V. 2016. All rights reserved.
3 of 10
NXP Semiconductors
8. Graphs
BFT92
PNP 5 GHz wideband transistor
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DDD
Fig 1.
L2 = L3 = 5 uH Ferroxcube choke, cataloque number 3122 108 20150 L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal diameter 4 mm
Intermodulation distortion test circuit
VCE = .