DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFT45 PNP high-voltage transistor
Product specification Supersedes data of S...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BFT45
PNP high-voltage
transistor
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 18
Philips Semiconductors
Product specification
PNP high-voltage
transistor
FEATURES Low current (max. 500 mA) High voltage (max. 250 V). APPLICATIONS High voltage switching and amplification Industrial and telephone applications.
1 handbook, halfpage 2
BFT45
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
DESCRIPTION
PNP high-voltage
transistor in a TO-39 metal package.
3
MAM334
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO VCEO ICM Ptot hFE Cc fT PARAMETER collector-base voltage collector-emitter voltage peak collector current total power dissipation DC current gain collector capacitance transition frequency Tcase ≤ 50 °C IC = −10 mA; VCE = −10 V IE = ie = 0; VCE = −20 V; f = 1 MHz IC = −15 mA; VCE = −10 V; f = 100 MHz open emitter open base CONDITIONS − − − − 50 − − MIN. − − − − − − 70 TYP. MAX. −250 −250 −1 5 150 15 − pF MHz UNIT V V A W
1997 Apr 18
2
Philips Semiconductors
Product specification
PNP high-voltage
transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissi...