BFT25

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 November 1992 Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. PINNING PIN 1 2 3 base emitter collector 1 Top view BFT25 DESCRIPTION Code: V1p fpage 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO Ic Ptot fT Cre GUM F PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation transition frequency feedback capacitance up to Ts = 167 °C; note 1 IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C IC = 1 mA; VCE = 1 V; f = 1 MHz; Tamb = 25 °C open base CONDITIONS open emitter − − − − 2.3 − 18 3.8 TYP. MAX. 8 5 6.5 30 − 0.45 − − UNIT V V mA mW GHz pF dB dB maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. November 1992 2 PARAMETER collector-bas...