NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifier at colector current from 2mA to 28mA)
BFS 483
NPN Silicon RF Transistor • For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA • ...
BFS 483
NPN Silicon RF
Transistor For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA fT = 8GHz
F = 1.2dB at 900MHz
Two (galvanic) internal isolated
Transistors in one package
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFS 483 RHs Q62702-F1574 1/4 = B 2/5 = E 3/6 = C
Package SOT-363
data below is of a single
transistor
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 65 5 mW 450 150 - 65 ... + 150 - 65 ... + 150 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
TS ≤ 40 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
1)
RthJS
≤ 245
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-16-1996
BFS 483
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 100 -
V µA 100 nA 100 µA 1 50 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V
Semiconductor Group
2
Dec-16-1996
BFS 483
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