BFS380L6
NPN Silicon RF Transistor Preliminary data
High current capability and low figure for
4 5 6 1 2 3
wide dyna...
BFS380L6
NPN Silicon RF
Transistor Preliminary data
High current capability and low figure for
4 5 6 1 2 3
wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz Low noise figure: 1.1 dB at 1.8 GHz Built in 2
transistors ( TR1, TR2: die as BFR380L3)
6 T R 1 5 4
T R 2
P-TSLP-6-1
1 2 3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFS380L6
Maximum Ratings Parameter
Marking Pin Configuration Package FC 1=C1 2=E1 3=C2 4=B2 5=E2 6=B1 TSLP-6-1
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value 6 15 15 2 80 14 380 150 -65 ... 150 -65 ... 150 Value
140
Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 96°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2)
mA mW °C
Unit K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Jun-11-2003
BFS380L6
Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 40 mA, VCE = 3 V hFE...
