NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
• Pb-free (RoH...
NPN Silicon RF
Transistor
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
Pb-free (RoHS compliant) package
BFS17W
32 1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFS17W
Marking
Pin Configuration
MCs
1=B
2=E
3=C
Package SOT323
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature
VCEO VCBO VEBO IC ICM Ptot
TJ TA
15 25 2.5 25 50 280
150 -65 ... 150
Storage temperature
TStg -65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point2)
RthJS
≤ 205
1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mW °C
Unit K/W
1 2011-07-20
BFS17W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 VCB = 25 V, IE = 0 Emitter-base cutoff current VEB = 2.5 V, IC = 0 DC current gain IC = 2 mA, VCE = 1 V, pulse measured IC = 25 mA, VCE = 1 V, pulse measured Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA
V(BR)CEO 15
-
-
ICBO IEBO
-...
