NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA)
BFS 17W
NPN Silicon RF Transistor
• For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA
Type BF...
BFS 17W
NPN Silicon RF
Transistor
For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA
Type BFS 17W
Marking Ordering Code MCs Q62702-F1645
Pin Configuration 1=B 2=E 3=C
Package SOT-323
Maximum Ratings of any single
Transistor Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Symbol Values 15 25 2.5 25 50 mA Unit V
VCEO VCBO VEBO IC ICM Ptot
f ≥ 10 MHz
Total power dissipation
mW 280 150 - 65 + 150 - 65 ... + 150 ≤ 205 °C
TS ≤ 93 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
1)
Tj TA Tstg RthJS
K/W
1) Package mounted on aluminia 15 mm x 16,7 mm x 0,7 mm
Semiconductor Group
1
Nov-28-1996
BFS 17W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics of any single
Transistor Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 70 0.1 -
V µA 0.05 10 100 20 20 150 V 0.4
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO
VCB = 10 V, IE = 0 VCB = 25 V, IE = 0
Emitter-base cutoff current
IEBO
-
VEB = 2.5 V, IC = 0
DC current gain
hFE
IC = 2 mA, VCE = 1 V IC = 25 mA, VCE = 1 V
Collector-emitter saturation voltage
VCEsat
IC = 10 mA, IB = 1 mA
Semiconductor Group
2
Nov-28-1996
BFS 17W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. AC Characteristics of any single
Transistor Transiti...