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BFS17S

Part Number	BFS17S
Manufacturer	Infineon Technologies AG
Description	NPN Silicon RF Transistor
Published	Mar 23, 2005
Detailed Description	NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • BFS17S: For ...
Datasheet	BFS17S PDF File

Overview

NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see package information below • Pb-free (RoHS compliant) package BFS17S 4 5 6 3 2 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17S Marking Pin Configuration Package MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current, f = 10 MHz Total power dissipation1) TS ≤ 93 °C Junction temperature Ambient temperature Storage temperature ...

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