BFS17LT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BFS17LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high–gain, low–noise amplifier, oscillator and mixer applications. Packaged for thick or thin film circuits using surface mount components. T1 suffix indicates tape and reel packaging of 3,000 units per reel. MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Maximum Junction Temperature Symbol VCEO VCBO TJmax Value 15 25 150 Unit Vdc Vdc °C BFS17LT1 RF TRANSISTOR NPN SILICON THERMAL CHARACTERISTICS Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C (1) Storage Temperature Thermal Resistance Junction to Ambient (1) Symbol PD Tstg RθJA Max 350 2.8 – 55 to +150 357 Unit mW mW/°C °C °C/W CASE 318–08, STYLE 6 SOT–23 LOW PROFILE (TO–236AA/AB) DEVICE MARKING BFS17LT1 = E1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) Collector–Base Breakdown Voltage (IC = 100 µA) Collector Cutoff Current (VCE = 10 V) Collector Cutoff Current (VCB = 10 V) Emitter Cutoff Current (VEB = 4 V) V(BR)CEO V(BR)CBO ICEO ICBO IEBO 15 25 — — — — — — — — — — 25 25 100 Vdc Vdc nA nA µA ON CHARACTERISTICS DC Current Gain (IC = 2 mA, VCE = 1 V) (IC = 25 mA, VCE = 1 V) Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) Base–Emitter Saturation Voltage (IC = 10 mA, IB = 1 mA) hFE 20 ...